Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-04-09

1998-12-08

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723I, 156345, 31511151, C23C 1600

Patent

active

058463313

ABSTRACT:
A dielectric member is provided at the upper portion of a grounded vacuum reaction vessel. Other portion of the vacuum reaction vessel is grounded. A flow path is formed within the dielectric member. The flow path is covered with a conductive member and an insulation member. The conductive member is grounded at the same voltage as the vacuum reaction vessel. Also, a temperature measuring element is buried within the dielectric member. The temperature measured by the temperature measuring element is fed back so that the temperature of the hot insulation medium is controlled. Thus, the temperature of the dielectric member is maintained constant within a range of 60.degree. to 160.degree. C.

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patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5626751 (1997-05-01), Kikuchi et al.

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