Coating apparatus – Gas or vapor deposition – With treating means
Patent
1993-04-05
1995-08-08
Kunemund, Robert
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118728, 156345, C23C 1650, H01L 2100
Patent
active
054395240
ABSTRACT:
An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate. A method for processing a semiconductor wafer includes the steps of clamping a wafer to a pedestal (thereby imposing a curvature on the wafer) and releasing a process fluid over the wafer through a plurality of apertures provided in a non-planar dispersion plate having a complementary curvature to the curvature of the wafer.
REFERENCES:
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4342901 (1982-08-01), Zajac
patent: 4578559 (1986-03-01), Hijikata et al.
patent: 4624767 (1986-11-01), Obinata
patent: 5203958 (1993-04-01), Arai et al.
patent: 5248371 (1993-09-01), Maher et al.
patent: 5266153 (1993-11-01), Thomas
Webster's Third New International Dictionary, Merriam Webster Inc., 1986, p. 469.
Cain John L.
Costabile Michael E.
Marsh William P.
Relue Michael P.
Baskin Jonathan D.
Kunemund Robert
VLSI Technology Inc.
LandOfFree
Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-968657