Plasma processing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

118723E, C23F 102, C23C 1600

Patent

active

059193328

ABSTRACT:
A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.

REFERENCES:
patent: 5529657 (1996-06-01), Ishii

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