Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1992-12-18

1994-07-05

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118724, C23C 1648

Patent

active

053264045

ABSTRACT:
A plasma processing apparatus for processing a semiconductor wafer by using a plasma to fabricate a semiconductor device comprises: a film forming vessel having at least one film forming chamber for forming a Ti/TiN laminate layer or a Ti/TiON/TiN laminate layer on a semiconductor wafer therein; and a heating system for heating the side wall of the film forming vessel so that the inner surface of the side wall is heated at a predetermined temperature to prevent the deposition of a coarse TiN film or TiN particles, which are liable to deteriorate the quality of the laminate layer formed on the semiconductor wafer, over the inner surface of the side wall of the film forming vessel.

REFERENCES:
patent: 4223048 (1980-09-01), Engle
patent: 4592306 (1986-06-01), Gallego

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