Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-01-27

1999-10-26

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

059709073

ABSTRACT:
To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

REFERENCES:
patent: 5261962 (1993-11-01), Hamamoto et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5345145 (1994-09-01), Harafuji et al.
patent: 5531834 (1996-07-01), Ishizura et al.
patent: 5540781 (1996-07-01), Yamagami et al.
H. Curtins, et al., "Influence of Plasma Excitation Frequency for a Si:H Thin Film Deposition", Plasma Chem. and Plasma Proc., vol. 7, pp. 267-273 (1987).

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