Plasma processing apparatus

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C156S345450, C156S345470

Reexamination Certificate

active

07849815

ABSTRACT:
This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.

REFERENCES:
patent: 4950376 (1990-08-01), Hayashi et al.
patent: 5044311 (1991-09-01), Mase et al.
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5571366 (1996-11-01), Ishii et al.
patent: 5891350 (1999-04-01), Shan et al.
patent: 6051100 (2000-04-01), Walko, II
patent: 6178919 (2001-01-01), Li et al.
patent: 6544380 (2003-04-01), Tomoyasu et al.
patent: 6673196 (2004-01-01), Oyabu
patent: 2004/0025788 (2004-02-01), Ogasawara et al.
patent: 05-251394 (1993-09-01), None
patent: 09-055374 (1997-02-01), None
patent: 2002-151473 (2002-05-01), None
patent: 0227755 (2002-04-01), None
Korean language office action dated Aug. 8, 2005 and its English language translation for corresponding Korean Application 1020030080252.
Korean language office action dated Feb. 7, 2006 and its English language translation for corresponding Korean application 1020030080252.
Chinese language office action dated Oct. 31, 2005 and its English language translation for corresponding Chinese application 200310114387.5.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4227263

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.