Plasma processing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723E, C23F 108

Patent

active

059420758

ABSTRACT:
A plasma processing apparatus includes a processing vessel for accommodating an object to be processed, a processing supplying mechanism for supplying processing gas into the processing vessel, first and second electrodes arranged to oppose each other in the processing vessel, and high-frequency power supply for supplying a high-frequency power to at least one of the first and second electrodes. The apparatus forms a plasma of the processing gas by using discharge occurring between the first and second electrodes due to the high-frequency power and performs a plasma process for the object by using the plasma. The surface of a solid except for the object to be processed in the processing vessel has a corner portion and a portion other than the corner portion, and the solid surface has a shape by which the thickness of a sheath formed between the solid surface and the plasma is nearly uniform in the corner portion and the other portion.

REFERENCES:
patent: 5474643 (1995-12-01), Arami et al.
patent: 5499602 (1996-03-01), Cho

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