Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

2005-01-04

2005-01-04

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

C156S345280

Reexamination Certificate

active

06837937

ABSTRACT:
It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.

REFERENCES:
patent: 5672541 (1997-09-01), Booske et al.
patent: 6297594 (2001-10-01), Sakai et al.
patent: 20020020499 (2002-02-01), Collins et al.
patent: 11-003883 (1999-01-01), None
patent: 11-008225 (1999-01-01), None
patent: 2000-072529 (2000-03-01), None
patent: 2001-319966 (2001-11-01), None

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