Plasma processing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723MW, 118723ME, C23F 108

Patent

active

059118520

ABSTRACT:
A plasma processing apparatus includes a conductive thin film provided on a surface of a microwave introducing member which is exposed to a processing chamber, in which an object to be processed is placed. The conductive thin film is provided at the entire portion excluding a transmission portion, through which microwaves pass into the processing chamber. The conductive thin film is grounded to act as an electrode.

REFERENCES:
patent: 5074985 (1991-12-01), Tamura et al.
patent: 5432315 (1995-07-01), Kaji et al.
patent: 5487875 (1996-01-01), Suzuki
patent: 5529632 (1996-06-01), Katayama et al.
patent: 5545258 (1996-08-01), Katayama et al.

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