Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-09-30
1998-04-14
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
H01L 21336
Patent
active
057390690
ABSTRACT:
An apparatus for manufacturing a semiconductor device having: a process chamber capable of being evacuated; a coil unit for generating an alternating magnetic field in the process chamber; a conductive partition unit disposed in the process chamber for defining an inner space and generating another alternating magnetic field which cancels a change in the alternating magnetic field generated in the inner space, the partition unit allowing gas to be transported between the inner space and a space outside of the inner space; a pipe for supplying process gas to the process chamber; and a pipe for exhausting gas from said process chamber. The gas supply pipe and gas exhaust pipe have a plurality of openings directed to the inner space. Radicals are efficiently generated by inductively coupled plasma, and efficiently transported by a gas flow into the inner space.
REFERENCES:
patent: 4362632 (1982-12-01), Jacob
patent: 4631105 (1986-12-01), Carroll et al.
patent: 4633809 (1987-01-01), Hirose et al.
patent: 4676195 (1987-06-01), Yasui et al.
patent: 5006192 (1991-04-01), Deguchi
patent: 5099100 (1992-03-01), Bersin et al.
patent: 5114529 (1992-05-01), Masuyama et al.
patent: 5217560 (1993-06-01), Kurono et al.
patent: 5248371 (1993-09-01), Maher et al.
patent: 5282396 (1994-02-01), Takashima et al.
patent: 5292396 (1994-03-01), Takashima et al.
patent: 5405447 (1995-04-01), Murata et al.
patent: 5423915 (1995-06-01), Murata et al.
patent: 5496594 (1996-03-01), Konig et al.
patent: 5498290 (1996-03-01), Matossian et al.
patent: 5591268 (1997-01-01), Usui et al.
Chiba Shou
Usui Kaoru
Breneman R. Bruce
Fujitsu Limited
Stein Julie
LandOfFree
Plasma process with radicals does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma process with radicals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma process with radicals will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-634313