Plasma process with radicals

Details Plasma process with radicals Plasma process with radicals

1996-09-30

1998-04-14

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

H01L 21336

Patent

active

057390690

ABSTRACT:
An apparatus for manufacturing a semiconductor device having: a process chamber capable of being evacuated; a coil unit for generating an alternating magnetic field in the process chamber; a conductive partition unit disposed in the process chamber for defining an inner space and generating another alternating magnetic field which cancels a change in the alternating magnetic field generated in the inner space, the partition unit allowing gas to be transported between the inner space and a space outside of the inner space; a pipe for supplying process gas to the process chamber; and a pipe for exhausting gas from said process chamber. The gas supply pipe and gas exhaust pipe have a plurality of openings directed to the inner space. Radicals are efficiently generated by inductively coupled plasma, and efficiently transported by a gas flow into the inner space.

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