Plasma process utilizing an electrostatic chuck

Details Plasma process utilizing an electrostatic chuck Plasma process utilizing an electrostatic chuck

1996-06-28

1999-12-07

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427534, 427569, 427570, 427573, 438711, 438729, 438798, 216 67, 216 71, B05D 306, H05H 100, H01L 21306

Patent

active

059979623

ABSTRACT:
A wafer is subjected to a plasma process, using plasma generated while a process gas is fed into a process room, and a plus DC voltage is applied to an electrostatic chuck in order to attract and hold the wafer on the electrostatic chuck by an electrostatic force. A minus DC voltage is applied to the electrostatic chuck while nitrogen gas is fed into the process room in order to cause DC discharge after the processed wafer is separated from the electrostatic chuck and before a next wafer is attracted and held on the electrostatic chuck. By doing so, plus electric charge in the gas is attracted to the electrostatic chuck, so that the surface of the electrostatic chuck is charged with plus electric charge, thereby preventing its attracting function from being deteriorated.

REFERENCES:
patent: 5102496 (1992-04-01), Savas
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5325261 (1994-06-01), Horwitz
patent: 5328555 (1994-07-01), Gupta
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5378311 (1995-01-01), Nagayama et al.
patent: 5380566 (1995-01-01), Robertson et al.
patent: 5539609 (1996-07-01), Collins et al.
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5557215 (1996-09-01), Saeki et al.
patent: 5573981 (1996-11-01), Sato
patent: 5665167 (1997-09-01), Deguchi et al.
patent: 5764471 (1998-06-01), Burkhart
patent: 5790365 (1998-08-01), Shel
Translation of J.P. 60-150,632 to Tokura (previously cited), Aug. 8, 1995.
Translation to J.P. 04-51542 to Kobayashi (previously cited), Feb. 20, 1992.
Translation to J.P. 06-188305 to Iwata (previously cited) Jul. 8, 1994.
Translation to JP. 05-283,379 to Takeda (previously cited) Oct. 29, 1993.

Affiliated with

Also associated with

Rating

Plasma process utilizing an electrostatic chuck does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma process utilizing an electrostatic chuck, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma process utilizing an electrostatic chuck will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-821164