Plasma process system and method

Details Plasma process system and method Plasma process system and method

1994-03-17

1996-02-27

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Multizone chamber

156345, 118723R, 118723E, 20429825, 20429835, C23C 1600

Patent

active

054945224

ABSTRACT:
A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.

REFERENCES:
patent: 3603284 (1971-09-01), Garnache
patent: 4657620 (1987-04-01), Davis
patent: 4659413 (1987-04-01), Davis
patent: 4842680 (1989-06-01), Davis et al.
patent: 4911597 (1990-03-01), Maydan et al.
patent: 5147493 (1993-10-01), Nishimura et al.
patent: 5280983 (1994-01-01), Maydan

Affiliated with

Also associated with

Rating

Plasma process system and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma process system and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma process system and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1675937