Plasma process chamber and system

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With multiple gas energizing means associated with one...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C156S345430, C156S345460, C156S348000, C156S345490, C118S7230ER, C118S7230IR

Reexamination Certificate

active

10402927

ABSTRACT:
The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a substrate provided on the inner bottom of the lower housing. On the substrate is placed a wafer. A plasma reactor is provided between the upper housing and the lower housing of the plasma process chamber. The plasma reactor is provided on the outer circumference of its main body with at least one reactor tube of horseshoe shape. A closed magnetic core is attached to the reactor tube, and a coil is wound on said magnetic core. The coil is connected electrically to an A.C. power. The plasma reactor is placed in the middle area of the plasma process chamber and a plurality of the reactor tubes are provided on the outer circumference of the plasma reactor so that plasma reaction is generated and distributed evenly in the plasma process chamber. Consequently, high density of the plasma can be obtained. Furthermore, the generated plasma ion particles are diffused evenly in the plasma process chamber by the diffusion induction electrodes so that cleaning efficiency can be highly increased in the plasma process chamber.

REFERENCES:
patent: 4615756 (1986-10-01), Tsujii et al.
patent: 4811684 (1989-03-01), Tashiro et al.
patent: 5032205 (1991-07-01), Hershkowitz et al.
patent: 5435881 (1995-07-01), Ogle
patent: 5487785 (1996-01-01), Horiike et al.
patent: 5571366 (1996-11-01), Ishii et al.
patent: 5683548 (1997-11-01), Hartig et al.
patent: 5900064 (1999-05-01), Kholodenko
patent: 5944902 (1999-08-01), Redeker et al.
patent: 5976308 (1999-11-01), Fairbairn et al.
patent: 6095084 (2000-08-01), Shamouilian et al.
patent: 6302057 (2001-10-01), Leusink et al.
patent: 6348126 (2002-02-01), Hanawa et al.
patent: 6380684 (2002-04-01), Li et al.
patent: 6387208 (2002-05-01), Satoyoshi et al.
patent: 6392351 (2002-05-01), Shun'ko
patent: 6418874 (2002-07-01), Cox et al.
patent: 6432260 (2002-08-01), Mahoney et al.
patent: 6490994 (2002-12-01), Yoshizawa
patent: 6508199 (2003-01-01), Oyabu
patent: 6537421 (2003-03-01), Drewery
patent: 6679981 (2004-01-01), Pan et al.
patent: 6755150 (2004-06-01), Lai et al.
patent: 6835278 (2004-12-01), Selbrede et al.
patent: 2001/0015175 (2001-08-01), Masuda et al.
patent: 2001/0018951 (2001-09-01), Masuda et al.
patent: 2002/0066536 (2002-06-01), Hongoh et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma process chamber and system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma process chamber and system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma process chamber and system will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3821322

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.