Plasma process apparatus including ground electrode with protect

Electric heating – Metal heating – By arc

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2191214, 21912141, 156345, 20429817, 20429837, 216 70, B23K 1000

Patent

active

054323150

ABSTRACT:
A microwave plasma processing apparatus includes a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced, a sample table, disposed in the vacuum chamber, to which an AC voltage is applied, a microwave generating device for generating microwaves and introducing the microwaves towards a surface to be processed of a sample located on the sample table, a magnetic field generating device for generating a magnetic field in the vacuum chamber, an insulator disposed on a part of the vacuum chamber exposed to a plasma produced in the vacuum chamber by interaction of the processing gas, the microwaves, and the magnetic field, and a ground electrode disposed in the vacuum chamber at a place which is on a microwave introduction side of the vacuum chamber with respect to the surface of the sample table on which the sample is placed, a surface of the ground electrode being covered by a semiconducting thin film.

REFERENCES:
patent: 4889609 (1989-12-01), Cannella
patent: 5081421 (1992-01-01), Miller et al.
patent: 5200053 (1993-06-01), Shimomura et al.
patent: 5272417 (1993-12-01), Ohmi
patent: 5298290 (1994-03-01), Jost et al.

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