Plasma preclean with argon, helium, and hydrogen gases

Details Plasma preclean with argon, helium, and hydrogen gases Plasma preclean with argon, helium, and hydrogen gases

2006-05-30

2006-05-30

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C134S001100, C134S001200

Reexamination Certificate

active

07053002

ABSTRACT:
The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.

REFERENCES:
patent: 4028155 (1977-06-01), Jacob
patent: 4711698 (1987-12-01), Douglas
patent: 4872947 (1989-10-01), Wang et al.
patent: 5000819 (1991-03-01), Pedder et al.
patent: 5232871 (1993-08-01), Ho
patent: 5248636 (1993-09-01), Davis et al.
patent: 5266154 (1993-11-01), Tatsumi
patent: 5423941 (1995-06-01), Komura et al.
patent: 5476182 (1995-12-01), Ishizuka et al.
patent: 5527718 (1996-06-01), Seita et al.
patent: 5534445 (1996-07-01), Tran et al.
patent: 5572072 (1996-11-01), Lee
patent: 5607542 (1997-03-01), Wu et al.
patent: 5643834 (1997-07-01), Harada et al.
patent: 5660682 (1997-08-01), Zhao et al.
patent: 5674373 (1997-10-01), Negrerie et al.
patent: 5725938 (1998-03-01), Jin et al.
patent: 5726097 (1998-03-01), Yanagida
patent: 5773367 (1998-06-01), Jen
patent: 5843847 (1998-12-01), Pu et al.
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5877032 (1999-03-01), Guinn et al.
patent: 5877087 (1999-03-01), Mosely et al.
patent: 5899720 (1999-05-01), Mikagi
patent: 5935874 (1999-08-01), Kennard
patent: 5950083 (1999-09-01), Inoue et al.
patent: 5970378 (1999-10-01), Shue et al.
patent: 6033537 (2000-03-01), Suguro
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 0 430 303 (1990-12-01), None
patent: 0 520 519 (1992-12-01), None
patent: 0 553 961 (1993-01-01), None
patent: 0 849 779 (1997-12-01), None
patent: 0849779 (1998-06-01), None
patent: 2 290 166 (1995-12-01), None
patent: 2 283 461 (1998-05-01), None
patent: 2 319 532 (1998-05-01), None
patent: 2 319 533 (1998-05-01), None
patent: 06097111 (1994-08-01), None
Yasushi Sawada, Hiroshi Tamaru, Masuhiro Kogoma, Motoaki Kawase, and Kenji Hashimoto, “The Reduction of Copper Oxide Thin Films With Hydrogen Plasma Generated By An Atmospheric-Pressure Glow Discharge,” J. Phys. D: Appl. Phys. 29 (1996), pp. 2539-2544.
PCT International Search Report for PCT/US99/27829.

Affiliated with

Also associated with

Rating

Plasma preclean with argon, helium, and hydrogen gases does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma preclean with argon, helium, and hydrogen gases, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma preclean with argon, helium, and hydrogen gases will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3633285