Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-10-11
2005-10-11
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257S289000
Reexamination Certificate
active
06953954
ABSTRACT:
A plasma oscillation switching device of the present invention comprises semiconductor substrate101; first barrier layer103that is composed of a III-V compound semiconductor and formed on the substrate; channel layer104that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer105that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode107, gate electrode109and drain electrode108provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer103a, the second barrier layer includes p-type diffusion layer105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer106.
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Mizuno Koichi
Otsuka Nobuyuki
Suzuki Asamira
Yokogawa Toshiya
Yoshii Shigeo
McDermott Will & Emery LLP
Wilson Allan R.
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