Plasma operation apparatus

Details Plasma operation apparatus Plasma operation apparatus

1988-01-19

1989-10-31

Pianalto, Bernard

Coating apparatus

Gas or vapor deposition

With treating means

118500, 118620, 20415743, 2041921, 427 38, 427 47, C23C 1600, C23C 1400

Patent

active

048769835

ABSTRACT:
A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

REFERENCES:
Transactions of 31th Semiconductor Integrated Circuit Technology Symposium Held on Dec. 3 & 4, 1986, pp. 49-54, 61-66.

Affiliated with

Also associated with

Rating

Plasma operation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma operation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma operation apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-620486