Chemistry: analytical and immunological testing – Rate of reaction determination
Reexamination Certificate
2004-06-25
2008-10-21
Gakh, Yelena G (Department: 1797)
Chemistry: analytical and immunological testing
Rate of reaction determination
C436S055000, C438S005000, C438S008000, C438S009000
Reexamination Certificate
active
07439068
ABSTRACT:
Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere, wherein the amount of the atomic radicals is predicted from the dissociation degree of the molecular raw material gas determined from the partial pressure of the molecular raw material gas in the process atmosphere, the luminous intensity of the rare gas, and the partial pressure of the rare gas in the process atmosphere, whereby the amount of the specific atomic radicals can be monitored easily and accurately.
REFERENCES:
Benissad et al. “Silicon dioxide deposition in a microwave plasma reactor”, Surface and Coating Technology, 1999, v. 116-119, pp. 868-873.
Macko et al. “Time resolved O2 (b1Σ+g) rotational temperature measurements in a low-pressure oxygen pulsed discharge; simple and quick method for temperature determination”, J. Phys. D: Appl. Phys., 1999, v. 32, pp. 246-250.
Ja{hacek over (s)}ik et al. “Time resolves actinometric study of pulsed RF oxygen discharge”, Czechoslovak J. Phys., 2004, v. 54, No. 6, pp. 661-676.
Taylor et al. “Control of dissociation by varying oxygen pressure in noble gas admixtures for plasma processing”, J. Vas. Sci. Technol. A, 2005, v. 23, No. 4, pp. 643-650.
Nakano “Some recent topics in non-equilibrium discharge plasma technologies—their widespread use from low pressure to atmospheric pressure”, IEEE Transaction on Dielectric and Electrical Insulation, 2007, v. 14, No. 5, pp. 1081-1087.
Gakh Yelena G
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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