Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2005-02-22
2005-02-22
Hassanzadeh, Parviz (Department: 1763)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S710000, C216S061000, C156S345240, C118S712000
Reexamination Certificate
active
06858446
ABSTRACT:
In certain embodiments a plasma is supplied from a plasma chamber10into a reaction chamber18of a plasma CVD apparatus. An electrode22is disposed in the reaction chamber18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode22. A radio-frequency wave is generated by a radio-frequency wave generator28and supplied to the electrode22via a radio-frequency matching network30, a blocking capacitor32, and an RF probe34so as to control the plasma in the plasma chamber10. A judgment device38is electrically connected to the RF probe34. The voltage and current are be measured by the RF probe and the judgment device38is used to judge the state of the plasma in the plasma chamber10.
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Notice of Reasons of Rejection for Japanese Patent Application No. 10-211834, dated Aug. 19, 2003, which lists JP10-041097, JP08-339896, JP02-195698, JP64-090533, and JP06-260298.
Denda Atsushi
Ito Yoshinao
Hassanzadeh Parviz
Konrad Raynes & Victor LLP
Raynes Alan S.
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