Plasma ion implantation hydrogenation process utilizing voltage

Details Plasma ion implantation hydrogenation process utilizing voltage Plasma ion implantation hydrogenation process utilizing voltage

1994-06-08

1996-04-16

Fourson, George

Fishing, trapping, and vermin destroying

437173, 437937, H01L 21263, H01L 21326

Patent

active

055082270

ABSTRACT:
A method of hydrogenating a thin film semiconductor wafer and an apparatus for performing the method. In one embodiment the method comprises the steps applying a pulsed potential having a predetermined amplitude, a predetermined repetition rate and a predetermined pulse duration to the thin film semiconductor wafer while exposing the thin film semiconductor wafer to a hydrogen plasma. The method is especially applicable to the formation of thin film transistors in flat display panels.

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