Plasma ion deposition process

Details Plasma ion deposition process Plasma ion deposition process

1981-10-19

1984-04-17

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, 427 87, 427 93, B05D 306

Patent

active

044434880

ABSTRACT:
A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.

REFERENCES:
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patent: 4152478 (1979-05-01), Takagi
patent: 4281029 (1981-07-01), Takagi et al.
Sol Aisenberg, et al., "Ion-Beam Deposition of Thin Films of Diamondlike Carbon," J. App. Phys., 42 (7) 2953-2958, 1971.
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