Plasma immersion ion processor for fabricating semiconductor int

Details Plasma immersion ion processor for fabricating semiconductor int Plasma immersion ion processor for fabricating semiconductor int

1998-03-02

2000-05-02

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

118723AN, 156345, 156 89, 427 38, C23C 1600

Patent

active

060559284

ABSTRACT:
An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.

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