Plasma immersion ion implantation (PI.sup.3) apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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2504922, C23C 1650, H01J 37317

Patent

active

053543815

ABSTRACT:
Implantation apparatus for cold cathode plasma immersion ion implantation (C.sup.2 PI.sup.3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.

REFERENCES:
patent: 4384918 (1983-05-01), Abe
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4463255 (1984-07-01), Robertson et al.
patent: 4732761 (1988-03-01), Machida et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4897171 (1990-01-01), Ohmi
patent: 4925542 (1990-05-01), Kidd
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5136171 (1992-08-01), Leung et al.
X. Y. Qian, et al, "Plasma Immersion Ion Implantation of SiF.sub.4 and BF.sub.3 for Sub-100 nm P+/N Junction Fabrication", Applied Phys. Lett. 59(3), pp. 348-350, Jul. 1991.
C. Pico, "Plasma Immersion Ion Implantation: A Cluster Compatible Technology", Solid State Technology, pp. 81-84, May 1992.
Article by X. Y. Qian, et al., entitled "Sub-100nm P+/N Junction Formation Using Plasma Immersion Ion Implantation", published in Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol. B55, No. 1-4, in Apr. 1991.
Article by Nathan W. Cheung, entitled "Plasma Immersion Ion Implantation for ULSI Processing", published in VII. Trends & Applications, in 1991, pp. 811-820.
Memorandum No. UCB/ERL M90/84 by X. Y. Qian, et al., entitled "Plasma Immersion Ion Implantation for VLSI Fabrication", published by College of Engineering, University of California, Berkeley, on Sep. 13, 1990.
Article by X. Y. Qian, et al., entitled "Conformal Implantation for Trench Doping with Plasma Immersion Ion Implantation", published in Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol. B55, No. 1-4, pp. 898-901, in Apr. 1991.
Article by X. Y. Qian, et al., entitled "Plasma Immersion Pd Ion Implantation Seeding Pattern Formation for Selective Electroless Cu Plating", published in Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with materials and Atoms), vol. B55, No. 1-4, pp. 888-892, in Apr. 1991.

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