Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-07-18
1998-09-01
Tsai, Jey
Coating apparatus
Gas or vapor deposition
With treating means
118725, H01L 2100, C23C 1650
Patent
active
058006184
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to an electrode-embedded article such as a plasma-generating electrode device usable for semiconductors, or the like, a method of manufacturing such an electrode-embedded article, and an electromagnetic wave permeation body to be preferably used in such electrode-embedded articles.
BACKGROUND OF THE INVENTION
For semiconductor device production units requiring super-clean conditions, corrosive gases such as chlorine based gas, fluorine based gas and the like are used as a depositing gas, an etching gas, and a cleaning gas. Therefore, if a conventional heater wherein the surface of a resistance heating element is covered with a metal, such as stainless steel or Inconel, is used as a heater to heat wafers which are exposed to the corrosive gas, unfavorable minute chloride, oxide, fluoride, and other particles with diameters of a few .mu.m are formed due to the exposure of that metal to the corrosive gas.
In view of this, with those etchers and CVD units running at low temperatures, as illustrated in FIG. 1, by way of example, an arrangement used to be adopted, wherein infrared lamps 5 are installed outside a chamber 1 via a quartz window 4, the chamber interior being exposed to deposition-gas, etc.; a susceptor 2 made of aluminum for example is installed within the chamber 1 through an arm 3; and the susceptor 2 is heated by the infrared lamps 5, whereby a wafer W placed on the susceptor 2 is indirectly heated. In this arrangement, the metal susceptor 2 is used as an electrode for plasma generation, plasma is generated within the chamber 1 with high-frequency electric energy fed directly to susceptor 2 so as to form a semi-conductor film on the wafer W and clean it. In this case, the aluminum susceptor 2 has an insulating film of alumina with a thickness of approximately 10 .mu.m formed over its surface through an anodized aluminum production process so that wafer W was placed on this insulating film might be prevented from against directly receiving high-frequency electric energy. High-frequency electric energy discharging takes place with this insulating film maintained charged at a certain level within the plasma, since no charges flow to either one electrode, unlike current discharging.
However, in the above-mentioned conventional case the susceptor 2 was made of a metal, and therefore wafers were unfavorably contaminated with heavy metal. Particularly, the aluminum susceptor 2 was confronted with a problem of Mg-contamination. To solve the problem of such contamination, it has been proposed that susceptor 2 be insulating and a plate-like electrode 6 be attached to the rear face of the susceptor for plasma generation, as illustrated in FIG. 2 by way of example. Regrettably however, a further problem occurred wherein the plate-like electrode 6 for high-frequency electric energy supply intercepted infrared rays from infrared lamps 5, and the heating capacity of the susceptor 2 further declined. In addition, with said susceptor, the point of plasma generation deviated from the set position of the wafer W, whereby preferable plasma generation was generated, resulting in decreasing wafer cleanability. The susceptor with a ring-like electrode fitted around the outer periphery thereof also caused a similar problem.
Although said insulating film remains charged at a certain level in the stage of plasma generation for such processes as physical vapor deposition (PVD process), chemical vapor deposition (CVD process) or in an etching unit, electrolytically dissociated ions and electrons collide against the charged insulating film to damage said insulating film. Particularly, the anodized aluminum insulating film lacking denseness and having a thickness of approximately 10 .mu.m at most gave a short service life. Especially with the CVD process unit, an etching unit and the like using halogen-based corrosive gas, the anodized aluminum insulating film having such short service life requires frequent replacement. It was discovered that particularly the metals such as a
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Niori Yusuke
Umemoto Koichi
Ushikoshi Ryusuke
NGK Insulators Ltd.
Tsai Jey
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