Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1989-10-03
1991-07-16
Fisher, Richard V.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
156643, 118723, 21912143, 31511171, 31511141, 20429837, 20429838, H01L 21306, C23C 1400
Patent
active
050322028
ABSTRACT:
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.
REFERENCES:
patent: 4483737 (1984-11-01), Mantei
patent: 4713585 (1987-12-01), Ohno et al.
patent: 4727293 (1988-02-01), Asmussen et al.
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4778561 (1988-10-01), Ghanbari
patent: 4877509 (1989-10-01), Ogawa et al.
Berry Lee A.
Gorbatkin Steven M.
Tsai Chin-Chi
Burns Todd J.
Ericson Ivan L.
Fisher Richard V.
Martin Marietta Energy Systems Inc.
Spicer James M.
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