Plasma generating apparatus for large area plasma processing

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156643, 118723, 21912143, 31511171, 31511141, 20429837, 20429838, H01L 21306, C23C 1400

Patent

active

050322028

ABSTRACT:
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm.sup.2. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity.

REFERENCES:
patent: 4483737 (1984-11-01), Mantei
patent: 4713585 (1987-12-01), Ohno et al.
patent: 4727293 (1988-02-01), Asmussen et al.
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4778561 (1988-10-01), Ghanbari
patent: 4877509 (1989-10-01), Ogawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma generating apparatus for large area plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma generating apparatus for large area plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma generating apparatus for large area plasma processing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-128829

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.