Plasma formation of hydride compounds

Coating apparatus – Gas or vapor deposition – Multizone chamber

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118723, 427 39, C23C 1650

Patent

active

049458574

ABSTRACT:
The synthesis of hydride compounds by reacting both the ingredients of the compound and the hydrogen together in the presence of energy sufficient to ionize the hydrogen. An inert bombardment ingredient enhances efficiency. In situ generation of ingredients such as arsine is provided within the reactor adjacent the deposition site in chemical vapor deposition.

REFERENCES:
patent: 4505949 (1985-03-01), Jelks

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