Plasma etching system

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

156643, 156646, 20419232, 204298, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

046170790

ABSTRACT:
A relatively small amount of high frequency RF power is mixed with a predominantly low frequency RF power to provide an improved etch rate uniformity of a semiconductor wafer in a low frequency plasma etching system.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4579618 (1986-04-01), Celestino et al.

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