Plasma etching system

Details Plasma etching system Plasma etching system

1993-10-19

1995-06-13

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

1566431, 20429833, H01L 2100

Patent

active

054239362

ABSTRACT:
The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

REFERENCES:
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4931135 (1990-06-01), Horiuchi et al.
patent: 5022979 (1991-06-01), Hijikata et al.
Wolf, Silicon Processing for the VLSI Era, 1986, pp. 568-569.

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