Plasma etching reactor

Details Plasma etching reactor Plasma etching reactor

1991-02-01

1992-01-21

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, H01H 146, C23F 404, B01J 1912

Patent

active

050825470

ABSTRACT:
An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly facing surface thereof with a conductive layer such as aluminum. This provides a more uniform plasma reaction. The chamber is of the type which has alternating charged and ground electrodes.

REFERENCES:
patent: 4399014 (1983-08-01), Engle
patent: 4496420 (1985-01-01), Frohlich et al.
patent: 4676865 (1987-06-01), DeLarge

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