Plasma etching of Ni-containing materials

Details Plasma etching of Ni-containing materials Plasma etching of Ni-containing materials

2007-06-12

2007-06-12

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Forming or treating electrical conductor article

C216S022000, C216S067000, C216S075000, C438S710000, C438S720000, C438S742000

Reexamination Certificate

active

10501987

ABSTRACT:
An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via an ion-assisted reaction with HX and the Ni is etched by reacting with CO. The method is particularly well suited for anisotropic etching of Ti—Ni metal gates for CMOS applications. Etching of Ni—Fe layers is carried out by exposure to plasma comprising a carbonyl etching gas.

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