Plasma etching method, plasma etching apparatus, control...

Details Plasma etching method, plasma etching apparatus, control... Plasma etching method, plasma etching apparatus, control...

2006-03-28

2008-12-16

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S725000

Reexamination Certificate

active

07465670

ABSTRACT:
On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF4/CH2F2/N2/O2mixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.

REFERENCES:
patent: 6194128 (2001-02-01), Tao et al.
patent: 6207554 (2001-03-01), Xu et al.
patent: 6607675 (2003-08-01), Hsieh et al.
patent: 6632746 (2003-10-01), Kanegae et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6670278 (2003-12-01), Li et al.
patent: 6787446 (2004-09-01), Enomoto et al.
patent: 2004/0106297 (2004-06-01), Kanegae et al.
patent: 2004/0157460 (2004-08-01), Tanaka et al.
patent: 2005/0014667 (2005-01-01), Aoyama et al.
patent: 2005/0221599 (2005-10-01), Lanegae et al.
patent: 2001-210627 (2001-08-01), None
patent: 2003-209037 (2003-07-01), None

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