Plasma etching method for semiconductor device

Details Plasma etching method for semiconductor device Plasma etching method for semiconductor device

2006-11-14

2006-11-14

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S725000

Reexamination Certificate

active

07135409

ABSTRACT:
The present invention relates to plasma etching in which O2gas is added with He gas as a main component. At an early stage of a plasma discharge, Cl2gas is added and thereafter the supply of the Cl2gas is stopped. A small amount of Cl2gas is added in advance before the discharge start and thereafter the discharge is started.

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