Plasma etching method for forming hole in masked silicon dioxide

Details Plasma etching method for forming hole in masked silicon dioxide Plasma etching method for forming hole in masked silicon dioxide

1998-10-15

2000-10-24

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 79, 438743, H01L 2100

Patent

active

061367222

ABSTRACT:
A plasma etching method is provided, which forms a penetrating hole with a size as small as approximately 0.3 .mu.m or less and a high aspect ratio in a doped or undoped silicon dioxide film covered with a patterned masking film. This method is comprised of a step of forming a masking film with a window on a silicon dioxide film to be etched, and a step of selectively etching the silicon dioxide film through the window of the masking film using a fluorocarbon-based etching gas and a plasma in a reaction chamber, thereby forming a penetrating hole in the silicon dioxide film. During the step of selectively etching the silicon dioxide film, an etching condition is adjusted in such a way that a fluorocarbon polymer film having a ratio of carbon to fluorine (i.e., a C/F ratio) ranging from 1.1 to 1.8 is deposited on the masking film. The masking film preferably has a thickness of approximately 1 .mu.m or less. It is preferred that this method is carried out using a surface-wave plasma etching apparatus.

REFERENCES:
patent: 5928967 (1999-07-01), Radens et al.
patent: 6001699 (1999-12-01), Nguyen et al.
E. Ikawa, "Subjects on Dry Etching Technology for Coming Generation Device Process", Technical Proceedings Semicon/Japan 1993, pp. 405-411.

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