Plasma etching method and plasma etching apparatus

Details Plasma etching method and plasma etching apparatus Plasma etching method and plasma etching apparatus

2005-11-16

2008-11-25

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000

Reexamination Certificate

active

07456111

ABSTRACT:
At a surface of a semiconductor wafer W as a processing object, a SiOC layer, a SiC layer and a Cu layer are formed in the order from an upper side. In the SiOC layer, a first opening for forming a via is formed. Using the SiOC layer as a mask, a plasma etching of the SiC layer is selectively carried out by using an etching gas containing a gas mixture of NF3/He/Ar, thereby a second opening continuously following from the first opening being formed. Therefore, it is possible to carry out the etching of the SiC layer with a high selectivity with respect to the SiOC layer.

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