Plasma etching method and plasma etching apparatus

Details Plasma etching method and plasma etching apparatus Plasma etching method and plasma etching apparatus

1997-05-02

2000-12-26

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438717, 438729, 215 13, H01L 21302, H01L 21461

Patent

active

06165907&

ABSTRACT:
A plasma etching method includes the steps of forming an etching mask on a work piece, forming a patterned film, made of a material having an etching rate of 80% or more to 120% or less based on an etching rate for the work piece, on the work piece having the etching mask thereon, and etching the work piece and the patterned film formed thereon at the same time by use of a reactive gas plasma, wherein the film is formed with such a thickness that the thickness of a remaining portion of the film is equal to zero or more after the work piece is etched to a desired depth.

REFERENCES:
patent: 4201800 (1980-05-01), Alcorn et al.
patent: 5225035 (1993-07-01), Rolfson
patent: 5302477 (1994-04-01), Dao et al.
patent: 5320934 (1994-06-01), Misium et al.
patent: 5413966 (1995-05-01), Schoenborn
patent: 5478678 (1995-12-01), Yang et al.
patent: 5536603 (1996-07-01), Tsuchiya et al.
patent: 5792376 (1998-08-01), Kanai et al.

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