Plasma etching method and apparatus therefor

Details Plasma etching method and apparatus therefor Plasma etching method and apparatus therefor

2006-03-28

2008-10-28

Ahmed, Shamim (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With means for photochemical energization of a gas using...

C216S056000, C216S067000, C438S706000, C438S710000, C118S715000

Reexamination Certificate

active

07442274

ABSTRACT:
A fluorine-containing compound gas, e.g., SF6gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of light absorption of a reaction product, e.g., SiF4, for which, to be more precise, ranges from 9 μm to 10 μm, the light is irradiated onto a surface of an object to be processed from the light source. The SiF4molecules absorb the light, become activated and gain kinetic energy to be used in gaining an easy escape from a hole. As a consequence, an amount (a partial pressure) of fluorine radicals (F*) used as an etchant is increased and an etching rate of a silicon is increased.

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