Plasma etching method and apparatus

Details Plasma etching method and apparatus Plasma etching method and apparatus

1990-09-06

1992-12-01

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156627, 156643, 118723, 427 8, H01L 2100

Patent

active

051677482

ABSTRACT:
Method and apparatus for monitoring and maintaining the geometry of plasma in a plasma chamber is disclosed wherein the plasma density and plasma temperature in the chamber are monitored to calculate an initial sample dc voltage which is applied to the sample or first probe in or adjacent to the temperature. The current to the sample or first probe is then measured, a new sample voltage for the sample or first probe is then calculated and applied and these latter steps of measuring, calculating and applying are repeated. Different wire and flat probe structures and positions are disclosed.

REFERENCES:
patent: 4207137 (1980-06-01), Tretola
patent: 4316791 (1982-02-01), Taillet
patent: 4767496 (1988-08-01), Hieber
"Plasma Etching In Semiconductor Fabrication"; by Russ A. Morgan; Elsevier; .COPYRGT.1985.
N. Kelly, U. Kaiser, Research & Development, Aug. 1987, pp. 58-61, "SNMS Produces SIMS Quality Without Matrix Effects".
A. Wucher, F. Novak, W. Reuter, J. Vac. Sci. Technol., vol. 6, No. 4, Jul./Aug. 1988, pp. 2265-2270, entitled "Relative Elemental Sensitivity Factors in Secondary Neutral Mass Spectrometry".
A. Wucher, J. Vac. Sci. Technol., vol. 6, No. 4, Jul./Aug. 1988, pp. 2293-2298, entitled "Plasma Studies on the Leybold-Heraeus INA3 Secondary Neutral Mass Spectrometry System".
Dr. I. Langmuir and H. Mott-Smith, Jr., General Electric Review, 1924, vol. 17, No. 7, pp. 449-455, entitled "Studies of Electric Discharges in Gases at Low Pressures, Part I".
Dr. I. Langmuir and H. Mott-Smith, Jr., General Electric Review, Aug. 1924, vol. 27, No. 8, pp. 538-548, entitled "Studies of Electric Discharges in Gases at Low Pressures, Part II".

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