Plasma etching method

Details Plasma etching method Plasma etching method

2007-03-26

2010-10-12

Culbert, Roberts (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000

Reexamination Certificate

active

07811939

ABSTRACT:
A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2plasma obtained by exciting Cl2gas, SF6gas, and N2gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4plasma obtained by exciting Cl2gas, HBr gas, and CF4gas. In the main etching, N2gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

REFERENCES:
patent: 4255230 (1981-03-01), Zajac
patent: 7138314 (2006-11-01), Song et al.
patent: 9-232285 (1997-09-01), None

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