Plasma etching method

Details Plasma etching method Plasma etching method

2006-01-20

2008-10-07

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S426000, C438S696000, C438S700000

Reexamination Certificate

active

07432172

ABSTRACT:
A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first plasma process of forming deposits on the etching target layer at least around a boundary between the etching target layer and the mask layer in an opening portion constituting the pattern of the mask layer, and a second plasma process of forming the recess by etching the etching target layer after the first plasma process. An edge portion of an upper sidewall constituting the recess is rounded off in the second plasma process.

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patent: 5945724 (1999-08-01), Parekh et al.
patent: 6153478 (2000-11-01), Lin et al.
patent: 6174786 (2001-01-01), Kelley et al.
patent: 2003/0148224 (2003-08-01), Vahedi et al.

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