Plasma etching method

Details Plasma etching method Plasma etching method

2007-03-06

2007-03-06

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S720000, C252S079100

Reexamination Certificate

active

11063180

ABSTRACT:
The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film3consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.

REFERENCES:
patent: 4985113 (1991-01-01), Fujimoto et al.
patent: 1126514 (2001-08-01), None
patent: 06-084839 (1994-03-01), None
patent: 06-112169 (1994-04-01), None

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