Plasma etching method

Details Plasma etching method Plasma etching method

2006-05-02

2006-05-02

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S067000

Reexamination Certificate

active

07037843

ABSTRACT:
To provide a plasma etching method that can suppress discharge of active gases that do not contribute to plasma etching into the atmosphere, a plasma etching apparatus10is composed of a vacuum chamber12, a plasma processing section14, a helium supply section16, a PFC supply section18, a switching device20, and an exhaust opening22. In the use of the apparatus10, first, helium is introduced into the vacuum chamber12through the switching device20. Then, while introducing the helium, helium is also discharged from the exhaust opening22to set the interior of the vacuum chamber12at a specified pressure. When the pressure within the vacuum chamber12is stabilized at the specified pressure, plasma is generated within the vacuum chamber12, and at the same time, helium is switched to carbon tetrafluoride by the switching device20. As a result, carbon tetrafluoride that does not contribute to the plasma etching is prevented from being discharged into the atmosphere.

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