Plasma etching method

Details Plasma etching method Plasma etching method

2005-07-05

2005-07-05

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S756000, C438S757000

Reexamination Certificate

active

06914010

ABSTRACT:
A plasma etching method is performed by plasma etching an SiN layer through a mask layer to form a first wiring portion and a second wiring portion, the first and the second wiring portions having different wiring densities in the etched SiN layer, the mask having two pattern portions respectively corresponding to the first and the second wiring portions. In the plasma etching step, by using an etching gas including fluorocarbon and C2H2F4, the line width variation between the first and the second wiring portions is restrained.

REFERENCES:
patent: 6025115 (2000-02-01), Komatsu et al.
patent: 6342428 (2002-01-01), Zheng et al.
patent: 6753263 (2004-06-01), Ito et al.

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