Plasma etching apparatus with surface magnetic fields

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156643, 156646, 20429834, 20429837, H01L 2100

Patent

active

050322052

ABSTRACT:
A glow discharge etching apparatus includes a magnetic assembly for creating a surface magnetic field in close proximity to the walls of an etching chamber. An electrode is located within the chamber for supporting the object to the etched. A radio frequency signal is applied to the electrode so that it will emit secondary electrons upon bombardment by ions from an etching plasma created within the apparatus. A control plate may be positioned at various locations within the apparatus to regulate the amount of electron leakage to the control plate and thereby regulate the etching process. This apparatus provides improved uniformity and directionality of etching due to a low gas pressure and the surface magnetic field.

REFERENCES:
patent: 4119688 (1978-10-01), Hiraoka
patent: 4380488 (1983-04-01), Reichelderfer et al.
patent: 4422896 (1983-12-01), Class et al.
patent: 4482419 (1984-11-01), Tsukada et al.
patent: 4483737 (1984-11-01), Mantei
patent: 4492610 (1985-01-01), Okano
patent: 4600492 (1986-07-01), Ooshio et al.
patent: 4632719 (1986-12-01), Chow et al.
patent: 4657619 (1987-04-01), O'Donnell
patent: 4745337 (1989-05-01), Pichot et al.
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4769101 (1988-09-01), dos Santos Perciro Ribeiro
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4778561 (1988-10-01), Ghanbari
patent: 4838978 (1989-06-01), Sekine et al.
patent: 4842679 (1989-06-01), Kudo et al.
patent: 4842707 (1989-06-01), Kinoshita
patent: 4846928 (1989-07-01), Dolins et al.
patent: 4878995 (1989-11-01), Arikado et al.
patent: 4901667 (1990-02-01), Suzuki et al.
Vossen et al, Thin Film Processes, Academic Press, N.Y., 1978, pp. 16-17 and 88-89.
"Planar Magnetron Sputtering Cathode with Deposition Rate Distribution Controllability," Thin Solid Films, 1982, pp. 225-233.
"Plasma Etching in a Multipolar Discharge," Journal of Applied Physics, vol. 57(5), Mar. 1985, pp. 1638-1647.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma etching apparatus with surface magnetic fields does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etching apparatus with surface magnetic fields, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etching apparatus with surface magnetic fields will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-128838

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.