Plasma etching apparatus with dielectrically isolated electrodes

Details Plasma etching apparatus with dielectrically isolated electrodes Plasma etching apparatus with dielectrically isolated electrodes

1989-06-01

1990-11-06

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 20429831, C23F 102

Patent

active

049683748

ABSTRACT:
A dry etching apparatus has a vacuum chamber provided therein with an RF electrode. On the RF electrode an object substrate(s) is placed. The RF electrode is covered with a substrate bed(s) and detachable dielectric members. The substrate bed(s) includes a dielectric portion and a conductive portion provided just under the dielectric portion. The conductive portion is equipotential in terms of direct current to the RF electrode. At least one gap extension is consituted of a gap(s) between the dielectric members, a gap(s) between the dielectric members and the substrate bed(s), etc. and extends from the surface of the RF electrode to the plasma space. The gap extension(s) extends zigzaggedly from the RF electrode to the plasma space so that the plasma space can not structurally be viewed from the surface of the RF electrode irrespective the dimesions of the substrate. To the RF electrode is applied a negative DC voltage having larger absolute value than that of a negative self-bias voltage at the object substrate(s) induced by plasma discharge.

REFERENCES:
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4400235 (1983-08-01), Coquin et al.
patent: 4482419 (1984-11-01), Tsukada et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585920 (1986-04-01), Hoog et al.
patent: 4793975 (1988-12-01), Drage

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