Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1995-03-03

1996-09-17

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

1566431, 216 71, H05H 100

Patent

active

055565000

ABSTRACT:
An apparatus for etching a WSi film on a wafer by using a plasma of a gas containing a halogen element includes a vacuum process chamber in which upper and lower counter electrodes are provided. An electrostatic chuck is provided on a table at the center of a susceptor or the lower electrode. The wafer is held on the electrostatic chuck. A focus ring surrounding the wafer in a complementary manner is placed on a flange of the susceptor. The temperature of the wafer surface is set to be lower than that of the surface of the focus ring while the plasma is being generated. The focus ring comprises an inner part of amorphous carbon and an outer part of tungsten. While the plasma is being generated, a halide of tungsten generated from the outer part is diffused on the wafer surface, thereby correcting a distribution of the amount of the halide of tungsten on the wafer surface. Thus, the uniformity within the wafer surface of the etching rate and etching anisotropy is enhanced.

REFERENCES:
patent: 4350578 (1982-09-01), Frieser et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 4786359 (1988-11-01), Stark et al.
patent: 4793975 (1988-12-01), Drage
patent: 5292399 (1994-03-01), Lee et al.
patent: 5330607 (1994-07-01), Nowicki

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