Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1977-04-15

1978-07-18

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

219121P, 250531, C23C 1500, B01K 100

Patent

active

041014111

ABSTRACT:
In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.

REFERENCES:
patent: 3879597 (1975-04-01), Bersin et al.

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