Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1997-04-25

1999-04-20

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118728, 118723MA, 118723MR, C23F 102

Patent

active

058955518

ABSTRACT:
The present invention discloses a plasma etching apparatus which can protect the surface of the wafer from a damage due to collisions among the etching ions and can also process a plurality of wafers only by one-time plasma generation. In the etching apparatus of the present invention, a plurality of wafers are loaded in the chamber by a plurality of wafer support members which are located vertically round the gas dispersion tube used as a cathode electrode, and magnetic field formation means are provided to form a magnetic field around each wafer.

REFERENCES:
patent: 3988232 (1976-10-01), Wasa et al.
patent: 4422407 (1983-12-01), Bessot et al.
patent: 5178681 (1993-01-01), Moore et al.
patent: 5225024 (1993-07-01), Hanley et al.
patent: 5272417 (1993-12-01), Ohmi
patent: 5431769 (1995-07-01), Kisakibaru et al.
patent: 5484486 (1996-01-01), Blackburn et al.
patent: 5487785 (1996-01-01), Horiike et al.
patent: 5512102 (1996-04-01), Yamazaki
patent: 5627435 (1997-05-01), Jansen et al.

Affiliated with

Also associated with

Rating

Plasma etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etching apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2245936