Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1991-04-18

1993-08-17

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

20429835, 20429836, 20429837, 20429838, H01L 2100

Patent

active

052365379

ABSTRACT:
A microwave ECR plasma etching apparatus having a plasma generating chamber coupled to a separate treatment chamber for supporting a Group II-VI sample to be dry etched, are tailored for the dry etching of Group II-VI compound semiconductors resulting in highly anisotropic etched patterns in Group II-VI materials having vertical side walls taking advantage of the ionicity of the constituents of Group II-VI compounds and utilizing a low ion energy level which will not damage the crystalline integrity of the Group II-VI material. A precleaning step is provided prior to dry etching of the Group II-VI sample thereby enhancing the etching rate of the dry etching treatment. In several embodiments, the microwave ECR plasma etching apparatus includes precleaning apparatus integral with the treatment chamber to preclean the Group II-VI sample surface prior to its transfer, without braking vacuum, to the treatment chamber.

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