Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1978-07-27

1980-10-28

Mack, John H.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

204192E, 204298, 156643, C23F 102, H01L 21306

Patent

active

042305152

ABSTRACT:
An improvement in radial flow parallel plate plasma etchers has been developed in order to improve the uniformity of etching across the entire radial plate dimension. The improvement comprises radially decreasing the spacing between the electrodes wherein the gap between the electrodes is greatest at the center and smallest at the circumference of the electrodes.

REFERENCES:
patent: 4094722 (1978-06-01), Yamamoto et al.
patent: 4119881 (1978-10-01), Calderon
patent: 4148705 (1979-04-01), Battey et al.
H. M. Gartner et al., Achieving Uniform Etch Rates in Reactive Ion Plasma Etching Process, IBM Technical Disclosure Bulletin, vol. 20, No. 7, Dec. 1977, 2703.
H. M. Gartner et al., Selective Etch Rate Control Technique in Reactive Ion Etching, IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1032-1033.
A. Lanzaro, Individual Wafer Etch-Rate Control in Batch Reactor, IBM Technical Disclosure Bulletin, vol. 22, No. 3, Aug. 1979, pp. 1008-1009.
J. L. Vassen and W. Kern, Editors, Thin Film Processes, Academic Press, New York, 1978, pp. 507-512.

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