Plasma etching apparatus

Details Plasma etching apparatus Plasma etching apparatus

1985-04-22

1986-12-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204298, 20419232, B44C 122, C03C 1500, C23F 100, H01L 21306

Patent

active

046311050

ABSTRACT:
Apparatus for processing semiconductor wafers and the like in an ionized gas plasma. A reaction chamber is divided into two separate regions, and driven and grounded electrodes are positioned outside the reaction chamber adjacent to respective ones of the regions. Wafers or other workpieces to be processed are placed in the region adjacent to the grounded electrode, and the gas to be ionized is introduced into the region adjacent to the driven electrode. The ionization of the gas is confined to the region adjacent to the driven electrode, and the active species pass through the perforated shield to the wafers or other workpieces.

REFERENCES:
patent: 3879597 (1975-04-01), Bersin et al.
patent: 4115184 (1978-09-01), Poulsen
patent: 4158589 (1979-06-01), Keller et al.
patent: 4362632 (1982-12-01), Jacob

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